Nanoelectronics

 

ナノエレクトロニクスワークショップ
Nanoelectronics Workshop

単一原子制御

Single Atom Control for future nanoelectronics

General Information:

日時 / Time & date： 11/10, 9:30-12:00 – 10th November 9:30-12:00
主催 / Organization：

早稲田大学 / Waseda Univ.
イタリア大使館 / Italian Embassy
後援 / Support: 早稲田大学高等研究所 / Waseda Institute for Advanced Study

 

プログラム / Program

9:30- 9:40

“Opening”
TAKAHIRO SHINADA / Waseda Univ.

9:40- 10:05

“Single dopant devices: Toward diversity and high temperature operation”
MICHIHARU TABE / Shizuoka Univ.

10:05-10:30

“Single dopant simulation: DOS and carrier transport”
HIROSHI MIZUTA / Southampton Univ., JAIST

10:30-10:40

Break

10:40-11:05

“Single dopant doping process: Systematic studies of discrete dopant effects”
MASAHIRO HORI / Waseda Univ.

11:05-11:30

“Single dopant characterization: Field-effect charge-state control and its physics”
YUKINORI ONO / NTT

11:30-11:55

“Single dopant band-engineering: From coherent transport to Hubbard band formation in donor arrays in Silicon”
ENRICO PRATI / CNR

11:55-12:00

“Closing”
ENRICO PRATI / CNR